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| www.irf.com 1 automotive grade pd - 97793 descriptionspecifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely lowon-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features com- bine to make this design an extremely efficient and reliable device for use in automotive applica- tions and a wide variety of other applications. auxfs4409 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ features advanced process technology low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * hexfet ? power mosfet v (br)dss 300v r ds(on) typ. 58m ? max. 75m ? i d 39a s d g g d s gate drain source d 2 pak auxfs4409 s d g d parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, vgs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r ? jc junction-to-case CCC 0.40 c/w r ? ja junction-to-ambient (pcb mount) CCC 40 690 550 see fig.12a, 12b, 15, 16 375 2.5 20 max. 3928 180 -55 to + 175 300 absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. downloaded from: http:///
2 www.irf.com repetitive rating; pulse width limited bymax. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 2.0mh r g = 50 ? , i as = 23a, v gs =10v. part not recommended for use above this value. pulse width ? 1.0ms; duty cycle ? 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. starting t j = 25c, l = 2.0mh, r g = 50 ? , i as = 23a, v gs =10v. this is applied to d 2 pak, when mounted on 1" square pcb (fr- 4 or g-10 material). for recommended footprint and solderingtechniques refer to application note #an-994. ? s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 300 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.29 CCC v/c r ds(on) static drain-to-source on-resistance CCC 58 75 m ? v gs(th) gate threshold voltage 3.0 CCC 5.0 v gfs forward transconductance 42 CCC CCC v i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic electrical @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 78 117 q gs gate-to-source charge CCC 26 CCC nc q gd gate-to-drain ("miller") charge CCC 25 CCC t d(on) turn-on delay time CCC 18 CCC t r rise time CCC 20 CCC t d(off) turn-off delay time CCC 33 CCC ns t f fall time CCC 16 CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package and center of die contact c iss input capacitance CCC 5115 CCC c oss output capacitance CCC 420 CCC c rss reverse transfer capacitance CCC 90 CCC pf c oss output capacitance CCC 3910 CCC c oss output capacitance CCC 140 CCC c oss eff. effective output capacitance CCC 255 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 39 (body diode) a i sm pulsed source current CCC CCC 180 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 310 465 ns q rr reverse recovery charge CCC 1.7 2.6 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld ) v ds = 50v, i d = 23a i d = 23a v ds = 150v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 23a, v gs = 0v t j = 25c, i f = 23a, v dd = 150v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 5.0ma v gs = 10v, i d = 23a v ds = v gs , i d = 250 a v ds = 300v, v gs = 0v v ds = 300v, v gs = 0v, t j = 125c conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 240v, ? = 1.0mhz v gs = 0v, v ds = 0v to 240v v gs = 10v v dd = 300v i d = 23a r g = 2.2 ? downloaded from: http:/// www.irf.com 3 qualification information ? d 2 pak msl1 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000) ?? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 500v) ?? aec-q101-002 human body model class h2 (+/- 4000v) ?? aec-q101-001 downloaded from: http:/// 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v ? 60 s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v ? 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v ? 60 s pulse width 0 2 4 6 8 10 12 14 16 i d ,drain-to-source current (a) 0 10 20 30 40 50 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 5.0v 380 s pulse width downloaded from: http:/// www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060708090100 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 240v v ds = 150v v ds = 60v i d = 23a 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v downloaded from: http:/// 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 39a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:/// www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - !" fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 500 1000 1500 2000 2500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.2a 11a bottom 23a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a downloaded from: http:/// 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 23a downloaded from: http:/// www.irf.com 9 fig 17. #$% & ' ( for n-channel hexfet power mosfets ????? ???? ???? p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ) ! " #! $% & $ ' & ) + - + + + - - - ! ??? ! ??? " #$## ??? % & & ??? #$##' $ v ds 90%10% v gs t d(on) t r t d(off) t f ! ( ) ???? * % ??????? ! ' ( ! + - ! fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:/// 10 www.irf.com note: for the most current drawing please refer to ir website at http://www.irf.com/package/ !""#$ %% %% % ( *+* ,,+, $,$ -+- ./0 # 1 / / ( downloaded from: http:/// www.irf.com 11 & '( dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:/// 12 www.irf.com ordering information base part number package type standard pack complete part number form quantity auxfs4409 d2pak tube 50 auxfs4409 tape and reel left 800 auxfs4409trl tape and reel right 800 AUXFS4409TRR downloaded from: http:/// www.irf.com 13 ! " #$% & ' ( ! $ ) * ! * ! + ( ( & ! ,& ( ! ! ! + - ( ! ! . ! ! ) ! & ! ! - ) ! / 0 - 0 . & ) - ! 1 2 $ 2$ / 2$ ( ! 0 2$ . ( 0 * ( ! /1'+/ 34565 ( #$%! 0 . ( ! 0 . ' - ( 2 ) * + , *% -# . /01 #23# downloaded from: http:/// |
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